crecode.com

Rs = 2 k + Vs=3.3V VD + in Microsoft Office Creator Data Matrix ECC200 in Microsoft Office Rs = 2 k + Vs=3.3V VD +




How to generate, print barcode using .NET, Java sdk library control with example project source code free download:
Rs = 2 k + Vs=3.3V VD + using barcode implementation for microsoft office control to generate, create ecc200 image in microsoft office applications. UCC-128 Series diode circuit [E, None, 3.3.2] Figure 0.

3 shows NMOS and PMOS devices with drains, source, and gate ports annotated. Determine the mode of operation (saturation, linear, or cutoff) and drain current ID for each of the biasing configurations given below. Verify with SPICE.

Use the following transistor data: NMOS: k" = 115 A/V2, VT0 = 0.43 V, = 0.06 V 1, PMOS: k" = 30 n p A/V2, VT0 = 0.

4 V, = -0.1 V 1. Assume (W/L) = 1.

a. NMOS: VGS = 2.5 V, VDS = 2.

5 V. PMOS: VGS = 0.5 V, VDS = 1.

25 V. b. NMOS: VGS = 3.

3 V, VDS = 2.2 V. PMOS: VGS = 2.

5 V, VDS = 1.8 V. c.

NMOS: VGS = 0.6 V, VDS = 0.1 V.

PMOS: VGS = 2.5 V, VDS = 0.7 V.

[E, SPICE, 3.3.2] Using SPICE plot the I-V characteristics for the following devices.

. 3 Problem Set D ID S G S ID D Figure 0.3 NMOS and PMOS devices. a. NMOS W = 1.2 m, L = 0.

25 m b. NMOS W = 4.8 m, L = 0.

5 m c. PMOS W = 1.2 m, L = 0.

25 m d. PMOS W = 4.8 m, L = 0.

5 m [E, SPICE, 3.3.2] Indicate on the plots from problem 4.

a. the regions of operation. b.

the effects of channel length modulation. c. Which of the devices are in velocity saturation Explain how this can be observed on the IV plots.

[M, None, 3.3.2] Given the data in Table 0.

1 for a short channel NMOS transistor with VDSAT = 0.6 V and k =100 A/V2, calculate VT0, , , 2. f. , and W / L:. Measured NMOS transisto ECC200 for None r data VGS VDS 1.8 1.8 2.

5 1.8 1.8 VBS 0 0 0 1 -2 ID ( A) 1812 1297 1361 1146 1039.

Table 0.1 1 2 3 4 5 7.. 2.5 2 2 2 2. [E, None, 3.3.2] Given Data Matrix barcode for None Table 0.

2 ,the goal is to derive the important device parameters from these data points. As the measured transistor is processed in a deep-submciron technology, the unified model holds. From the material constants, we also could determine that the saturation voltage VDSAT equals -1V.

You may also assume that -2 F = -0.6V. NOTE: The parameter values on Table 3.

3 do NOT hold for this problem. a. Is the measured transistor a PMOS or an NMOS device Explain your answer.

b. Determine the value of VT0. c.

Determine . d. Determine .

. Digital Integrated Circuits - 2nd Ed e. Given the obtained a Microsoft ECC200 nswers, determine for each of the measurements the operation region of the transistor (choose from cutoff, resistive, saturated, and velocity saturated). Annotate your finding in the right-most column of the above.

. Table 0.2 Measurements taken from the MOS device, at different terminal voltages. Measurement number 1 2 3 4 5 6 7 8. VGS (V) -2.5 1 -0.7 -2.

0 -2.5 -2.5 -2.

5. VDS (V) -2.5 1 -0.8 -2.

data matrix barcodes for None 5 -2.5 -1.5 -0.

8. VSB (V) 0 0 0 0 -1 0 0. ID ( A) -84.375 0.0 -1.

datamatrix 2d barcode for None 04 -56.25 -72.0 -80.

625 -66.56. Operation Region [M, None, 3.3.2] An NMO Data Matrix for None S device is plugged into the test configuration shown below in Figure 0.

4. The input Vin =2V. The current source draws a constant current of 50 A.

R is a variable resistor that can assume values between 10k and 30 k . Transistor M1 experiences short channel effects and has following transistor parameters: k = 110*10-6 V/A2, VT = 0.4 , and VDSAT = 0.

6V. The transistor has a W/L = 2.5 /0.

25 . For simplicity body effect and channel length modulation can be neglected. i.

e =0, =0. ..

VDD = 2.5V R VD Vin=2V M1 W/L = 2.5 /0.25 .

I = 50 . Figure 0.4 Test configuration for the NMOS device. a. When R =10k find th e operation region, VD and VS. b.

When R= 30k again determine the operation region VD, VS c. For the case of R = 10k , would VS increase or decrease if [M, None, 3.3.

2] Consider the circuit configuration of Figure 0.5..

Copyright © crecode.com . All rights reserved.